1 x de R$19,90 sem juros | Total R$19,90 | |
2 x de R$10,29 | Total R$20,58 | |
3 x de R$7,08 | Total R$21,25 | |
4 x de R$5,48 | Total R$21,93 | |
5 x de R$4,52 | Total R$22,61 | |
6 x de R$3,88 | Total R$23,28 | |
7 x de R$3,42 | Total R$23,94 | |
8 x de R$3,08 | Total R$24,62 | |
9 x de R$2,81 | Total R$25,29 | |
10 x de R$2,60 | Total R$25,97 | |
11 x de R$2,42 | Total R$26,65 | |
12 x de R$2,28 | Total R$27,32 |
Transistor IBGT Canal N (MOS)
Transistor Iso-Gate | TO-218 AB
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
Maximum Ratings:
Collector-emitter voltage | VCE: 1000V
Collector-gate voltage RGE = 20 k? | VCGR: 1000V
Gate-emitter voltage | VGE: ± 20V
Power dissipation TC = 25 °C | Ptot: 310W
DC collector current | IC: TC = 25 °C: 35A | TC = 90 °C: 23A